Photolithography

01

Exposure and resist coating

• Overview
• Applying an adhesion promoter
• Coating
• Exposure
• Exposure methods used
• Multipatterning

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02

Exposition methods

• Overview
• Contact exposure
• Proximity exposure
• Reducing projection exposure
• Electron beam lithography
• X-ray lithography
• Additional methods

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03

Photoresist

• Photoresist
• Chemical composition

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04

Development and inspection

• Development
• Inspection
• Resist removal

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05

Photomasks

• Mask technology
• Photomask manufacturing
• Mask types
• Next-generation lithography

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06

Optical Proximity Correction (OPC)

• Introduction & Motivation
• Typical Print Errors Without Correction
• Mask Bias & Serifs
• Sub-Resolution Assist Features
• Rule-based vs. Model-based OPC
• Verification: Lithography Simulation & Process Window
• Limits and Outlook

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07

DUV vs. EUV

• Overview
• Technology Compared
• Resolution and the Rayleigh Criterion
• Challenges and Cost
• Comparison Table

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08

EUV Tool Technology

• The Light Source – Laser-Produced Plasma (LPP)
• Projection Optics and Scanner Principle
• EUV Photoresist Chemistry

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