Semiconductor Technology
from A to Z
Everything about semiconductors and wafer fabrication
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Fundamentals
The atomic structure
The elements, the periodic table
Chemical bonds
Noble gases
Conductors – Insulators – Semiconductors
Doping: n- and p-semiconductors
The p-n junction
Transistors and Memory
Wafer Fabrication
Silicon
Production of raw silicon
Fabrication of the single crystal
The wafer
Doping techniques
Oxidation
Overview
Fabrication of oxide layers
LOCOS technology
Deposition
Plasma, the fourth aggregation state of a material
Chemical vapor deposition
Physical deposition methods
Metallization
Requirements on metallization
Aluminum technology
Copper technology
Metal semiconductor junction
Wiring
Photolithography
Exposure and resist coating
Exposition methods
Photoresist
Development and inspection
Photomasks
Optical Proximity Correction (OPC)
Wet Chemistry
Etch processes
Wet etching
Wafer cleaning
Dry Etching
Overview
Dry etch processes
Wafer Test
Wafer Test
Final Test and Binning
Assembly
Dicing
Die Attach
Bonding
Encapsulation
Metrology
Film thickness measurement
Particle inspection
Digital technology
From transistor to logic gate
The CMOS Fabrication Flow
The SRAM Cell
The DRAM Cell
The Flash Memory Cell
Design Rules
Layout versus Schematic (LVS)
Circuit Layouts
Devices
Field-effect transistors
Bipolar transistors
Construction of a FinFET
DRAM Fabrication: The Trench Capacitor Process
Micromechanics
Introduction to MEMS
Anisotropic Etching of Silicon
Sacrificial Layer Technique
Bulk vs. Surface Micromachining
The MEMS Accelerometer
The Microphone and Pressure Sensor
DRIE: Deep Reactive Ion Etching
Compound Semiconductors
Fundamentals & Material System
Crystal Growth & Substrates
SiC Power Devices
GaN Power Devices
Applications & System Comparison
Process Flow
Supply Chain
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Technology
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65 nm
45 nm
32 nm
22 nm
16 nm
11 nm
7 nm
5 nm
3 nm
2 nm
Akronyms
Statistics
Bit per euro (DRAM)
Evolution of the gate length of MOSFETs
Exposure wavelength vs. critical dimensions
FLOPS: floating point operations
Intel:AMD - CPU clock
Intel:AMD - Number of transistors
Intel:AMD - Process development
Manufacturing costs for different technology nodes
Manufacturing costs per transistor
Millions of instructions per second
Number of calculations per second per 1000 euro
Number of manufactured bits
Compound Semiconductors
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Fundamentals & Material System
Why Compound Semiconductors for Power Electronics?
Material Comparison: SiC, GaN and Silicon
The Baliga Figure of Merit
Positioning: Where Is Each Material Used?
Crystal Growth & Substrates
SiC Crystal Growth: Physical Vapor Transport
Polytypes: Why 4H-SiC?
GaN Epitaxy: Heteroepitaxy Instead of Native Substrates
Lattice Matching, Strain and Defect Density
SiC Power Devices
The SiC Power MOSFET
The SiC Schottky Diode
Trench vs. Planar SiC MOSFET
The SiC/SiO2 Interface as a Challenge
GaN Power Devices
The 2DEG: Foundation of the HEMT
The GaN HEMT as a Power Switch
E-Mode vs. D-Mode and the Cascode Configuration
Lateral vs. Vertical: Why GaN Mostly Stays Lateral
Applications & System Comparison
E-Mobility: SiC Dominates the Traction Inverter
Fast-Charging Infrastructure and Power Supplies: GaN Excels at High Frequency
Efficiency and Switching Frequency Comparison
Cost Trends and Outlook
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Content
Fundamentals
Wafer Fabrication
Oxidation
Deposition
Metallization
Photolithography
Wet Chemistry
Dry Etching
Wafer Test
Assembly
Metrology
Digital technology
Devices
Micromechanics
Compound Semiconductors
Fundamentals & Material System
Crystal Growth & Substrates
SiC Power Devices
GaN Power Devices
Applications & System Comparison