Compound Semiconductors

01

Fundamentals & Material System

• Why Compound Semiconductors for Power Electronics?
• Material Comparison: SiC, GaN and Silicon
• The Baliga Figure of Merit
• Positioning: Where Is Each Material Used?

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02

Crystal Growth & Substrates

• SiC Crystal Growth: Physical Vapor Transport
• Polytypes: Why 4H-SiC?
• GaN Epitaxy: Heteroepitaxy Instead of Native Substrates
• Lattice Matching, Strain and Defect Density

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03

SiC Power Devices

• The SiC Power MOSFET
• The SiC Schottky Diode
• Trench vs. Planar SiC MOSFET
• The SiC/SiO2 Interface as a Challenge

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04

GaN Power Devices

• The 2DEG: Foundation of the HEMT
• The GaN HEMT as a Power Switch
• E-Mode vs. D-Mode and the Cascode Configuration
• Lateral vs. Vertical: Why GaN Mostly Stays Lateral

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05

Applications & System Comparison

• E-Mobility: SiC Dominates the Traction Inverter
• Fast-Charging Infrastructure and Power Supplies: GaN Excels at High Frequency
• Efficiency and Switching Frequency Comparison
• Cost Trends and Outlook

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06

HEMT and HBT for RF Applications

• The HEMT Principle for High-Frequency Applications
• The Heterojunction Bipolar Transistor (HBT)
• Applications in High-Frequency Electronics

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07

InP-Based Photonic Devices

• Why Indium Phosphide for Photonics
• Laser Diodes and Electroabsorption Modulators
• Photonic Integrated Circuits (PICs)

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