1. The Principle of the Sacrificial Layer
To create a free-standing structure – such as a cantilever beam or a membrane – it cannot simply be deposited directly on the substrate: it would remain permanently bonded to the underlying material and be unable to move. The sacrificial layer technique solves this by first depositing a temporary intermediate layer (the sacrificial layer) on the substrate. The actual functional layer (the structural layer) is then deposited and patterned on top of this sacrificial layer. At the end of the process, the sacrificial layer is selectively etched away – it is "sacrificed" so that the structural layer is left free-standing.
A classic material pair is silicon dioxide as the sacrificial layer and polysilicon as the structural layer: both can be deposited with established CVD processes, and hydrofluoric acid (HF) etches SiO₂ very selectively without significantly attacking the polysilicon.