Semiconductor Technology from A to Z

Everything about semiconductors and wafer fabrication

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Fundamentals

The atomic structure
The elements, the periodic table
Chemical bonds
Noble gases
Conductors – Insulators – Semiconductors
Doping: n- and p-semiconductors
The p-n junction
Transistors and Memory

Wafer Fabrication

Silicon
Production of raw silicon
Fabrication of the single crystal
The wafer
Doping techniques

Oxidation

Overview
Fabrication of oxide layers
LOCOS technology

Deposition

Plasma, the fourth aggregation state of a material
Chemical vapor deposition
Physical deposition methods

Metallization

Requirements on metallization
Aluminum technology
Copper technology
Metal semiconductor junction
Wiring

Photolithography

Exposure and resist coating
Exposition methods
Photoresist
Development and inspection
Photomasks
Optical Proximity Correction (OPC)

Wet Chemistry

Etch processes
Wet etching
Wafer cleaning

Dry Etching

Overview
Dry etch processes

Wafer Test

Wafer Test
Final Test and Binning

Assembly

Dicing
Die Attach
Bonding
Encapsulation

Metrology

Film thickness measurement
Particle inspection

Digital technology

From transistor to logic gate
The CMOS Fabrication Flow
The SRAM Cell
The DRAM Cell
The Flash Memory Cell
Design Rules
Layout versus Schematic (LVS)
Circuit Layouts

Devices

Field-effect transistors
Bipolar transistors
Construction of a FinFET
DRAM Fabrication: The Trench Capacitor Process

Micromechanics

Introduction to MEMS
Anisotropic Etching of Silicon
Sacrificial Layer Technique
Bulk vs. Surface Micromachining
The MEMS Accelerometer
The Microphone and Pressure Sensor
DRIE: Deep Reactive Ion Etching

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Content

Fundamentals
Wafer Fabrication
Oxidation
Deposition
Metallization
Photolithography
Wet Chemistry
Dry Etching
Wafer Test
Assembly
Metrology
Digital technology
Devices
Micromechanics

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1971 10 µm Intel 4004 · erster kommerzieller Mikroprozessor

1975 3 µm NMOS · Silizium-Gate

1982 1,5 µm Stepper · Ionenimplantation · CMOS

1989 1 µm CMOS wird zum Standard

1995 350 nm Excimerlaser · Grabenisolation

1997 250 nm Optical Proximity Correction

2000 180 nm Kupferverdrahtung

2007 45 nm High-k · Metal Gate

2012 22 nm 3D-Tri-Gate · FinFET

2018 7 nm EUV erreicht die Serienfertigung

2022 3 nm Gate-All-Around · Nanosheet

2025 2 nm GAA · Nanosheet · Backside Power

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Philipp Laube – Letztes Update: 10.08.2026

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