1. Bulk Micromachining: Etching Into the Depth
Bulk micromachining uses the substrate itself as the building material: deep etching into the wafer exposes three-dimensional structures such as membranes, cavities, or trenches. The anisotropic KOH/TMAH etching covered in an earlier chapter is a classic example – as is the DRIE process, which enables even steeper, deeper structures. Because this works directly in the crystal, bulk micromachining can produce comparatively large, mechanically robust structures, often tens to hundreds of micrometers deep.
The drawback: bulk micromachining consumes wafer volume and can only be combined to a limited extent with classical CMOS electronics on the same chip, since the deep etch steps could damage sensitive circuit structures. In addition, the crystal orientation of the substrate largely determines the possible shapes – on (100) silicon, for example, always the characteristic 54.74° angle, unless DRIE is used instead.