Bacteria, volatile antiferroelectrics and high-entropy oxides point to new device concepts

August 25, 2026

Bacteria, volatile antiferroelectrics and high-entropy oxides point to new device concepts

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Three new studies highlight how unconventional material systems could shape future devices in very different ways. One team at MIT built bacterial transistor circuits for environmental monitoring, while researchers in Seoul demonstrated an antiferroelectric two-terminal device that uses volatility as a computational feature. A third group from Carnegie Mellon University and Penn State turned an insulating metal oxide into a semiconductor through high-entropy mixing.

The MIT work uses Pantoea agglomerans to create two transistor types: one is switched on by OCopen cassetteSystem or component for automated transport and handling of wafers or materials.-6, the other is switched off by it. Both also sense OCopen cassetteSystem or component for automated transport and handling of wafers or materials.-12 and generate different amounts of OHC-14 depending on the input state. Three strains of the same bacterium act as relays, passing the signal from one colony to the next. The circuits are built by printing colonies onto agar plates with about 5 millimeters between neighbors, which forces signals to move step by step in one direction. The researchers showed logic operations including multi-input, or, and imply gates, and combined the devices into larger circuits such as adders and a demultiplexer.

In the antiferroelectric study, the key idea is to treat the return-to-initial-state behavior of the material as a function rather than a limitation. The device combines zirconium dioxide with amorphous indium gallium zinc oxide in a two-terminal structure, and composition tuning of the IGZO layer produced distinct current states from very small changes. The optimized device reached an on/off current ratio of about 890, separated 16 combinations of 4-bit inputs into different current states, and achieved 90.4% handwritten digit recognition while cutting input data by 75%.

The third study introduced A6WO4, a tungsten-oxide-based material built from manganese, iron, cobalt, nickel, copper, and zinc in a single wolframite crystal structure. This high-entropy design produced a semiconductor with ultra-low thermal conductivity, a combination that is uncommon in oxides. The authors say the approach can be used to tune electronic and thermal properties at the same time, and point to thermoelectric applications that convert waste heat into electricity.

Taken together, the three results expand the range of device concepts under discussion: biology-based switching, volatile memory-like computation, and entropy-driven oxide engineering.

Source: Semiconductor Engineering

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