Infineon HiRel’s new RIC70115 gate driver targets space power systems that increasingly rely on GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. to raise efficiency, switching speed, and power density. The device is a radiation-hardened, single-channel driver for GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. transistors and integrates a low-dropout regulator, or LDOlow-dropout regulatorA linear regulator with a small input-to-output voltage difference., directly into the driver architecture.
The integrated regulator generates a tightly controlled 4.8 V gate-drive rail from input voltages between 4.75 V and 15 V. That internal regulation is intended to keep the gate-drive voltage stable even when upstream rails vary, which is important because even small gate-voltage deviations can affect switching losses, power-stage efficiency, electromagnetic interference, device stress, and long-term reliability.
GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles.’s switching benefits stem from low gate charge, reduced output capacitance, and fast transition times. Those properties support lower switching losses and operation at higher frequencies than traditional silicon MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference. technologies, but only if the gate driver supplies the right bias conditions. The RIC70115 is positioned as a way to provide those conditions without requiring a separate bias regulator, auxiliary supply, or other external gate-drive regulation circuit.
Removing the dedicated external regulator reduces component count and board area and also cuts design work tied to regulation accuracy, startup behavior, and power sequencing. In space hardware, fewer parts can also simplify qualification, testing, and system-level verification while helping with size, weight, and power, or SWaP, constraints.
The integrated LDOlow-dropout regulatorA linear regulator with a small input-to-output voltage difference. is the central feature of the design because it consolidates gate-drive regulation inside the controller itself. That allows a more streamlined power architecture while preserving the controlled bias environment needed for GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. HEMT operation in space applications. The device is intended to support both high-side and low-side use.
Infineon HiRel is also offering the RIC70115EVAL1 evaluation board, which comes prepopulated with two RIC70115 gate driver IC1. integrated circuitIC is the common term for an integrated circuit.2. ion chromatographyAnalytical method that separates and identifies the components of a mixture.s and two IG1NT052N10R GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. HEMTs in a half-bridge configuration. The board is meant to demonstrate the driver’s operation in a complete high-performance GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. gate-drive setup for next-generation satellite power systems.