imec says it has extended chemically amplified resist (CARcomputer-aided researchSoftware-related method or tool for development, control or data processing.) technology to support single-pattern High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. lithography at 22-nm pitch. The work was shown at the 2026 SPIESociety of Photo-Optical Instrumentation EngineersThe conference organizer named in the event context. Photomask Technology + EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. Lithography Conference and is positioned as a step toward future A14/A10 logic integration.
The reported patterning results include line/space features down to 22 nm pitch and vias at 28 nm center-to-center distance. imec describes these as tight-pitch random logic structures produced after one High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. exposure, with good pattern fidelity on meander and forked e-test structures. The demonstrations also cover 24-nm SRAM1. static random access memoryMemory technology or system for temporarily or permanently storing digital information.2. static random-access memorySRAM is used here as a test vehicle for embedded memory performance. layouts at 26 nm tip-to-tip, 24-nm place-and-route structures at 28 nm tip-to-tip, and random logic via features at 28 nm center-to-center distance.
According to imec, these results build on earlier e-test data that had already shown CARcomputer-aided researchSoftware-related method or tool for development, control or data processing.-based single-pattern High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. feasibility at 28-nm pitch. The new data extend that envelope further and were achieved through co-optimization of CARcomputer-aided researchSoftware-related method or tool for development, control or data processing. materials and litho-etch techniques with material suppliers and the broader patterning ecosystem.
imec frames the development as relevant for several critical layers in advanced logic, including metal-2, via, and metal-to-diffusion layers. The company also links the work to its roadmap for High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. insertion at the A14/A10 logic nodes and to the European NanoIC pilot line targeting beyond-2nm systems-on-chip.
imec says the main point is not a replacement of CARcomputer-aided researchSoftware-related method or tool for development, control or data processing., but an extension of a mature resist platform into a regime that had not been accessible with single-print 0.33-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light.. Further optimization of CARcomputer-aided researchSoftware-related method or tool for development, control or data processing. resists and etch chemistries is now being pursued, with the stated goal of improving yield and pushing patterning to even tighter pitches.