Infineon is establishing the world’s first high-volume manufacturing facility in Europe for gallium nitride (GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles.) power semiconductors on 300-millimeter wafers. The project will be implemented at the company’s existing Villach site, where Infineon plans to invest around €1.1 billion in cleanroom capacity by 2034. Production is scheduled to start by the end of 2027.
The new line is intended to meet rising demand for high-performance power supply solutions in applications such as AIartificial intelligence data centers, energy infrastructure, e-mobility, robotics and consumer electronics. Infineon says the combination of existing and upgraded infrastructure will allow capacity to scale efficiently and with comparatively low cost.
The move builds on a previous technology milestone: two years ago, Infineon processed the world’s first 300-millimeter GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. wafers. Compared with 200-millimeter wafer production, the larger diameter is described as a more advanced and significantly more efficient approach, with 2.3 times as many chips per wafer.
The investment is being supported under the European Chips Act. The European Commission has approved €319 million in state aid, while the formal funding commitment from Austria’s Federal Ministry for Economic Affairs, Energy and Tourism is expected within the relevant deadlines. The support is meant to strengthen manufacturing capacity in Europe and reinforce technological sovereignty.
Villach is positioned as a global competence center for power semiconductors and new semiconductor materials. Infineon Austria employs around 5,800 people, about 4,800 of them in Villach. The site is closely linked to universities, research institutions, start-ups and industrial partners, and the new GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. facility is expected to create synergies with local power electronics R&D activities.
GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. is presented as a material that can switch and convert electricity more efficiently, enabling smaller, more powerful systems with lower energy loss and reduced heat generation. Market demand is expected to remain strong, with analysts projecting GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. power semiconductors to reach about USD 3.5 billion by 2031.