Infineon has launched its OptiMOS 7 40 V power MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference. portfolio for AIartificial intelligence servers, data centers and telecom infrastructure, positioning the devices for high-frequency DC-DCdirect current to direct currentA converter that changes one DC voltage level to another. power conversion in tightly packed systems. The portfolio is designed to improve efficiency and power density where board space and thermal headroom are limited.
The new MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference.s target low-voltage secondary-side stages of high-voltage intermediate bus converters in emerging 800 V DCdirect currentElectric current that flows in one direction. architectures, as well as intermediate bus converters in 48 V power architectures. In suitable topologies, switching frequencies beyond 1 MHzmegahertzFrequency unit equal to one million cycles per second. are supported.
According to the company, the device design balances on-state resistance, output charge and gate charge to address both conduction and switching losses. In a comparison between the source-down device IQE010N04LM7CGSC and its OptiMOS 6 predecessor IQE013N04LM6CGSC, maximum RDS1. remote dispense system2. resist dispense systemLithography material or component used for transferring patterns onto wafers.(on) at a gate-source voltage of 4.5 V is reduced by up to 33 percent, while the figures of merit for output charge and gate charge are each reduced by up to 35 percent.
The portfolio is optimized for 5 V gate drive and is intended to fit gate-drive ecosystems used with GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles.. Junction temperatures up to 175 °C are supported. Infineon also offers source-down and dual-side cooling package options for compact layouts and thermal management.
The IQE010N04LM7CG and IQE010N04LM7CGSC are supplied in PQFN 3.3 mm × 3.3 mm source-down center gate packages, with overmolded and dual-side cooling variants. Both have a maximum RDS1. remote dispense system2. resist dispense systemLithography material or component used for transferring patterns onto wafers.(on) of 1.0 mΩ at a gate-source voltage of 10 V.
The portfolio further includes the ISCH65N04LM7SC, ISCH69N04LM7SC and ISC011N04LM7SC in PQFN 5 mm × 6 mm drain-down packages with dual-side cooling. Their maximum RDS1. remote dispense system2. resist dispense systemLithography material or component used for transferring patterns onto wafers.(on) values at 10 V gate-source voltage are 0.65 mΩ, 0.69 mΩ and 1.1 mΩ, respectively. The portfolio is available and in mass production.