Large-format masks are moving from a long-running concept toward a coordinated industry roadmap. In the 2026 eBeam Initiative Luminaries survey, 66% of respondents expected adoption of a roughly 6 x 12 inch mask within the next decade, and the discussion at the SPIESociety of Photo-Optical Instrumentation EngineersThe conference organizer named in the event context. Photomask Technology + EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. Lithography Conference centered on a 12-inch pilot line targeted for 2031.
The main argument is productivity. High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. tools are described as extremely expensive, space-consuming, and facility-intensive, and a larger mask format could expose a bigger field without the process-control burden of A/B stitching. One panel estimate put the productivity upside at roughly 40%, making the case more compelling as each additional tool also adds power and infrastructure requirements.
The panel stressed that this is not simply a mask-size decision. The entire photomask ecosystem must be ready at the same time, and some critical parts of the mask-making chain still have only one supplier. Several speakers warned that one late element in a single-source area could delay the transition, especially if companies build fab plans around the 2031 timing.
Manufacturing the larger rectangular format also raises specific process challenges. Spin-based steps become harder to control across a bigger surface, including resist coating, development, cleaning, and drying. Longer edges and corners can create water-drop issues, and the larger area increases exposure to particles and contamination. Cleaning larger surfaces uniformly without adding defects was highlighted as a key concern, alongside the need for a large-format pellicle.
On the equipment side, the survey result showing that 68% of luminaries expect more mask-etching-system purchases over the next three years was interpreted as a capability shift rather than simple capacity growth. New High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. mask materials may not be compatible with existing systems or with .33 NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. materials running in parallel, which makes etching a live development area where tighter uniformity is required.
High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. EUVextreme ultravioletExtremely short-wavelength ultraviolet radiation; EUV lithography uses about 13.5 nm light. itself was described as having crossed a threshold. It is already in production at Intel, and Samsung has said it will be in production by 2028 while TSMCTaiwan Semiconductor Manufacturing CompanyTSMC is named as a founding partner of the EPIC Center. intends to use it in high-volume manufacturing for advanced nodes starting in 2030. The panel said the remaining questions now center less on whether High-NAnumerical apertureOptical measure of the light-gathering angle of a lens, related to resolution. will happen and more on where the performance benefit is sufficient to justify it.
Curvilinear masks were also presented as an active, near-term development. Multi-beam writers already enable them, and qualification remains the main challenge. The overall assessment was optimistic: the productivity case is strong, mask shops are investing, and the technical direction is becoming clearer, but the 2031 target depends on a complete ecosystem arriving on schedule.