Researchers from Huazhong University of Science and Technology, Hong Kong Polytechnic University, the University of California, Santa Barbara, and the National University of Singapore have reported a p-type transistor based on oxygen-doped WSe2 monolayers that combines low contact resistance with high current density in the ballistic regime.
The work focuses on a key limitation of 2D semiconductors: high contact resistance at the metal-semiconductor interface. In p-type devices, insufficient doping and metal-induced gap states during metal deposition can suppress the on-state current and undermine device performance. The new approach uses oxygen p-doping in monolayer tungsten diselenide to address that interface bottleneck.
According to the paper title and abstract excerpt, the devices are designed as high-performance ballistic p-type monolayer transistors. That places the emphasis on contact engineering rather than channel scaling alone, since the contact region becomes increasingly decisive as devices move toward sub-1-nm technology nodes.
The reported result is relevant for complementary metal-oxide-semiconductor circuit development using 2D materials beyond silicon. By reducing contact resistance in WSe2 monolayers, the study strengthens the case for p-type 2D transistors as part of advanced CMOS1. complementary metal-oxide semiconductorCircuit technology combining n- and p-channel MOS transistors for low static power consumption.2. complementary metal-oxide-semiconductorCMOS is a fundamental semiconductor technology for digital and analog circuits. integration, where both carrier polarity and current delivery remain central constraints.