Renesas Electronics has expanded into 100-V enhancement-mode discrete GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. power transistors with a new family aimed at low-voltage, high-efficiency power conversion. The portfolio includes the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSCdifferential scanning calorimetryThermal analysis measuring differences in heat flow during heating or cooling., and RTP100E1P2G1FL-DSCdifferential scanning calorimetryThermal analysis measuring differences in heat flow during heating or cooling..
The company says the devices achieve industry-leading hard- and soft-switching figure-of-merit values. Compared with comparable GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. devices, the family delivers up to 35% lower hard-switching FOMfigure of meritA composite metric used to compare switching performance and losses. and up to 63% lower soft-switching FOMfigure of meritA composite metric used to compare switching performance and losses.. Depending on application requirements and the power-conversion architecture, the transistors are also said to reduce switching losses by up to 40–70% and raise system-level power density by up to 2x.
The parts are offered in FCLGAflip-chip land grid arrayA package style with contact lands on the underside of the package. packages with a silicon-compatible footprint, which allows designers to move from silicon MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference. layouts without major PCBprinted circuit boardBoard that mechanically supports components and electrically interconnects them with copper traces. rework. Typical on-resistance is specified at 5 mΩ for the RTP100E005G1FL and 2.6 mΩ for the RTP100E2P6G1FL. The dual-side-cooled RTP100E1P8G1FL-DSCdifferential scanning calorimetryThermal analysis measuring differences in heat flow during heating or cooling. and RTP100E1P2G1FL-DSCdifferential scanning calorimetryThermal analysis measuring differences in heat flow during heating or cooling. are rated at 1.8 mΩ and 1.2 mΩ, respectively.
Renesas positions the family for high-power-density applications such as AIartificial intelligence data centers, humanoid robotics, and factory automation. The device mix is also intended to cover synchronous rectification, multiphase buck conversion, and industrial motor drives, with package options and resistance grades matching different power levels.
The new GaNgallium nitrideGaN is another material platform mentioned for use in different power delivery roles. transistors are available now, and corresponding evaluation boards are also offered.