Infineon has introduced new OptiMOS 7 automotive MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference.s that push the established TOLL package to a higher performance level without changing the 10 × 12 mm² footprint. The devices combine OptiMOS 7 semiconductor technology with a clip-based interconnection concept to achieve ultra-low on-resistance in the same package size already used in automotive designs.
The portfolio comprises 40 V, 80 V and 100 V MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference.s with RDS1. remote dispense system2. resist dispense systemLithography material or component used for transferring patterns onto wafers.(on) values of 0.24 mΩ, 0.57 mΩ and 0.88 mΩ. Compared with the previous-generation OptiMOS TOLL products referenced for the same voltage classes, that corresponds to improvements of 65 percent, 48 percent and 37 percent. The lower conduction losses are intended to raise power density and efficiency in 12 V and 48 V systems without requiring larger package architectures or redesigned board layouts.
Beyond conduction loss, the combination of the new device technology and the clip-based connection also improves capacitance and gate-charge behavior, which reduces switching losses. A tighter gate-threshold-voltage spread is designed to support more balanced current sharing when multiple MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference.s are connected in parallel, lowering the risk of overstressing an individual device.
Infineon positions the new parts for high-power 12 V and 48 V applications including EPS, battery-disconnect switches, motor drives and HVhigh voltageElectrical quantity used to describe or test circuit operating behavior.-LVlatent variableUnobserved variable inferred from measured data in a statistical model. DC-DCdirect current to direct currentA converter that changes one DC voltage level to another. converters. In these systems, conduction losses directly affect efficiency and thermal management, so the lower RDS1. remote dispense system2. resist dispense systemLithography material or component used for transferring patterns onto wafers.(on) can be used to raise efficiency, reduce heat generation, increase current capability or reduce the number of parallel MOSFET1. metal-oxide semiconductor field effect transistorVoltage-controlled field-effect transistor with an insulated gate, widely used in integrated circuits.2. metal-oxide-semiconductor field-effect transistorA common transistor type used here as the layout and technology reference.s.
The devices are available now. Infineon also notes the launch in the context of its presentation at electronica 2026 in Munich, where the company is showcasing semiconductor technologies and system solutions across automotive, industrial and AIartificial intelligence-related applications.