Short updates from the semiconductor industry, with context and links to the relevant chapters. RSS
Sort: Newest first · Oldest first
September 8, 2026 Manufacturing & Processes
Samsung Electronics is joining an industry initiative for a new 12-inch photomask platform and plans to introduce ASML’s High-NA EUV lithography into future DRAM high-volume manufacturing by 2028.
September 8, 2026 Companies & Market
GlobalFoundries has finalized a $375 million agreement with the U.S. Department of Commerce to expand domestic quantum semiconductor manufacturing and move quantum chips closer to commercial-scale production.
September 8, 2026 Research
imec and its material partners have demonstrated that chemically amplified resists can still support single-exposure High-NA EUV patterning at 22-nm pitch, including tight-pitch logic lines, vias, and SRAM-related structures relevant to A14/A10 nodes.
September 8, 2026 Artificial intelligence
AI-assisted programming tools are being promoted as a way to speed up IoT software development, yet experts caution against assuming large productivity gains without evidence.
September 8, 2026 Circuit Design & Applications
From milliwatt diode lasers to high-power material processing systems, the performance of the power supply is a key factor for stability and service life.
September 8, 2026 Research
Semiconductor Engineering’s latest paper roundup spans HBF for LLM inference, monolithically integrated M3D SRAM with BEOL pass-gates at 2nm, hybrid HBM-HBF memory, GaN-on-silicon polarization superjunctions, programmable silicon photonics, distributed GPU architectures, and Al dopant activation in 4H-SiC.
September 8, 2026 Circuit Design & Applications
EDN compares several third-order active Butterworth filter topologies, from ideal and Sallen-Key versions to emitter-follower and DC-accurate implementations, and contrasts simulations with lab Bode measurements.
September 8, 2026 Research
Three research efforts point to new approaches for ultra-thin interconnect insulation, 600 C SiC logic devices, and more stable oxide vertical channel transistors for compute-in-memory.
September 8, 2026 Circuit Design & Applications
A radio receiver’s ADC choice is no longer only about sampling rate. With embedded DSP blocks that handle decimation, digital downconversion, and IQ correction, the balance between analog filtering, data rate, and FPGA load shifts in measurable ways.
September 7, 2026 Devices & Products
Automotive coolant level sensors do more than trigger a warning lamp. EDN explains how float, optical, capacitive, resistive, and ultrasonic approaches detect low coolant before overheating can damage engines, EV battery packs, or cooling loops.
September 4, 2026 Research
Research reports this week highlighted a room-temperature 2D tunnel transistor, a fully in-memory photonic computing chip from Tsinghua University, and a series of funding and education moves tied to quantum, packaging, and semiconductor skills. The roundup also touched on GaN power devices, defect-pattern AI, and India’s $13.4 billion Semicon 2.0 initiative.
September 3, 2026 Artificial intelligence
A new methodology argues that modern electronic design can no longer rely mainly on heuristics and experience. By combining optimization, automation, and AI, engineering teams can explore larger design spaces, standardize analyses, and extract more useful insight from simulation data.
September 1, 2026 Devices & Products
In data-center optical scale-up links, the largest avoidable losses are not in the fiber itself but at the connector interface and inside the silicon-photonics platform.
September 1, 2026 Artificial intelligence
Generative AI is making synthetic media more convincing, and the problem is no longer limited to video manipulation. EDN highlights how advancing fakery methods can also undermine technical verification and make false claims harder to spot.
September 1, 2026 Research
New work from EPFL reports a GaN transistor architecture that approaches 4 kV breakdown while avoiding the usual trade-off with on-state resistance. Separate studies show an ultrathin magnesium process for low-resistance p-GaN contacts and a diamond interposer that spreads heat away from GaN transistors in a 3D stack.